| PART |
Description |
Maker |
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH10N170 |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3061 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN3061 ECN3061SPR ECN3061SP ECN3061SPV |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| ECN30601SP ECN30601SPR ECN30601SPV ECN30601 |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TPD4105AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113K07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4104AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LDNC |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
